| Шығарылым |
Атауы |
Файл |
| Том 52, № 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
(Eng)
|
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Gorshkov A., Volkova N., Pavlov D., Usov Y., Istomin L., Levichev S.
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| Том 52, № 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
(Eng)
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Mizerov A., Timoshnev S., Sobolev M., Nikitina E., Shubina K., Berezovskaia T., Shtrom I., Bouravleuv A.
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| Том 52, № 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
(Eng)
|
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Polischuk O., Fateev D., Popov V.
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| Том 52, № 12 (2018) |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
(Eng)
|
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Tikhov S., Gorshkov O., Antonov I., Tetelbaum D., Mikhaylov A., Belov A., Morozov A., Karakolis P., Dimitrakis P.
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| Том 52, № 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
(Eng)
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Baidus N., Yunin P., Shaleev M., Reunov D., Rykov A., Novikov A., Nekorkin S., Kudryavtsev K., Krasilnik Z., Dubinov A., Aleshkin V., Yurasov D.
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| Том 52, № 12 (2018) |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
(Eng)
|
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Gudina S., Vasil’evskii I., Yakunin M., Shelushinina N., Podgornykh S., Savelyev A., Neverov V., Ilchenko E., Arapov Y., Vinichenko A.
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| Том 52, № 12 (2018) |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
(Eng)
|
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Erofeeva I., Dorokhin M., Zdoroveyshchev A., Kuznetsov Y., Popov A., Lantsev E., Boryakov A., Kotomina V.
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| Том 52, № 12 (2018) |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
(Eng)
|
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Samartsev I., Nekorkin S., Zvonkov B., Aleshkin V., Dubinov A., Pashenkin I., Dikareva N., Chigineva A.
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| Том 52, № 12 (2018) |
Solar Cell Based on Core/Shell Nanowires |
(Eng)
|
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Sibirev N., Kotlyar K., Koryakin A., Shtrom I., Ubiivovk E., Soshnikov I., Reznik R., Bouravleuv A., Cirlin G.
|
| Том 52, № 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
(Eng)
|
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Tsyplenkov V., Shastin V.
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| Том 52, № 12 (2018) |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
(Eng)
|
|
Sablikov V., Tkach Y.
|
| Том 52, № 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
(Eng)
|
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Spirin K., Gaponova D., Marem’yanin K., Rumyantsev V., Gavrilenko V., Mikhailov N., Dvoretsky S.
|
| Том 52, № 12 (2018) |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
(Eng)
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Maremyanin K., Ikonnikov A., Bovkun L., Rumyantsev V., Chizhevskii E., Zasavitskii I., Gavrilenko V.
|
| Том 52, № 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
(Eng)
|
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Akimov A., Klimov A., Epov V.
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| Том 52, № 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
(Eng)
|
|
Mansurov V., Galitsyn Y., Malin T., Teys S., Fedosenko E., Kozhukhov A., Zhuravlev K., Cora I., Pécz B.
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| Том 52, № 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
(Eng)
|
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Venediktov M., Dukov D., Krevskiy M., Metelkin I., Chukov G., Elesin V., Obolensky S., Bozhen’kina A., Tarasova E., Fefelov A.
|
| Том 52, № 11 (2018) |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
(Eng)
|
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Yunin P., Volkov P., Drozdov Y., Koliadin A., Korolev S., Radischev D., Surovegina E., Shashkin V.
|
| Том 52, № 11 (2018) |
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots |
(Eng)
|
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Derebezov I., Gaisler V., Gaisler A., Dmitriev D., Toropov A., von Helversen M., de la Haye C., Bounouar S., Reitzenstein S.
|
| Том 52, № 11 (2018) |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
(Eng)
|
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Novikov A., Yurasov D., Morozova E., Skorohodov E., Verbus V., Yablonskiy A., Baidakova N., Gusev N., Kudryavtsev K., Nezhdanov A., Mashin A.
|
| Том 52, № 11 (2018) |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
(Eng)
|
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Kozlov D., Rumyantsev V., Morozov S., Kadykov A., Fadeev M., Hübers H., Gavrilenko V.
|
| Том 52, № 11 (2018) |
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices |
(Eng)
|
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Pavelyev D., Vasilev A., Kozlov V., Obolenskaya E.
|
| Том 52, № 11 (2018) |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
(Eng)
|
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Rumyantsev V., Kulikov N., Kadykov A., Fadeev M., Ikonnikov A., Kazakov A., Zholudev M., Aleshkin V., Utochkin V., Mikhailov N., Dvoretskii S., Morozov S., Gavrilenko V.
|
| Том 52, № 11 (2018) |
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface |
(Eng)
|
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Rudin S., Smagina Z., Zinovyev V., Novikov P., Nenashev A., Rodyakina E., Dvurechenskii A.
|
| Том 52, № 11 (2018) |
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz |
(Eng)
|
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Khabibullin R., Shchavruk N., Ponomarev D., Ushakov D., Afonenko A., Vasil’evskii I., Zaycev A., Danilov A., Volkov O., Pavlovskiy V., Maremyanin K., Gavrilenko V.
|
| Том 52, № 11 (2018) |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
(Eng)
|
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Zhukov A., Gordeev N., Shernyakov Y., Payusov A., Serin A., Kulagina M., Mintairov S., Kalyuzhnyy N., Maximov M.
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