Issue |
Title |
File |
Vol 52, No 12 (2018) |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
 (Eng)
|
Tikhov S.V., Gorshkov O.N., Antonov I.N., Tetelbaum D.I., Mikhaylov A.N., Belov A.I., Morozov A.I., Karakolis P., Dimitrakis P.
|
Vol 52, No 12 (2018) |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
 (Eng)
|
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
|
Vol 52, No 12 (2018) |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
 (Eng)
|
Gudina S.V., Vasil’evskii I.S., Yakunin M.V., Shelushinina N.G., Podgornykh S.M., Savelyev A.P., Neverov V.N., Ilchenko E.I., Arapov Y.G., Vinichenko A.N.
|
Vol 52, No 12 (2018) |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
 (Eng)
|
Erofeeva I.V., Dorokhin M.V., Zdoroveyshchev A.V., Kuznetsov Y.M., Popov A.A., Lantsev E.A., Boryakov A.V., Kotomina V.E.
|
Vol 52, No 12 (2018) |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
 (Eng)
|
Samartsev I.V., Nekorkin S.M., Zvonkov B.N., Aleshkin V.Y., Dubinov A.A., Pashenkin I.J., Dikareva N.V., Chigineva A.B.
|
Vol 52, No 12 (2018) |
Solar Cell Based on Core/Shell Nanowires |
 (Eng)
|
Sibirev N.V., Kotlyar K.P., Koryakin A.A., Shtrom I.V., Ubiivovk E.V., Soshnikov I.P., Reznik R.R., Bouravleuv A.D., Cirlin G.E.
|
Vol 52, No 12 (2018) |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
 (Eng)
|
Tsyplenkov V.V., Shastin V.N.
|
Vol 52, No 12 (2018) |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
 (Eng)
|
Sablikov V.A., Tkach Y.Y.
|
Vol 52, No 12 (2018) |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
 (Eng)
|
Spirin K.E., Gaponova D.M., Marem’yanin K.V., Rumyantsev V.V., Gavrilenko V.I., Mikhailov N.N., Dvoretsky S.A.
|
Vol 52, No 12 (2018) |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
 (Eng)
|
Maremyanin K.V., Ikonnikov A.V., Bovkun L.S., Rumyantsev V.V., Chizhevskii E.G., Zasavitskii I.I., Gavrilenko V.I.
|
Vol 52, No 12 (2018) |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
 (Eng)
|
Akimov A.N., Klimov A.E., Epov V.S.
|
Vol 52, No 12 (2018) |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
 (Eng)
|
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
|
Vol 52, No 12 (2018) |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
 (Eng)
|
Venediktov M.M., Dukov D.I., Krevskiy M.A., Metelkin I.O., Chukov G.V., Elesin V.V., Obolensky S.V., Bozhen’kina A.D., Tarasova E.A., Fefelov A.G.
|
Vol 52, No 12 (2018) |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
 (Eng)
|
Gorshkov A.P., Volkova N.S., Pavlov D.A., Usov Y.V., Istomin L.A., Levichev S.B.
|
Vol 52, No 12 (2018) |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
 (Eng)
|
Mizerov A.M., Timoshnev S.N., Sobolev M.S., Nikitina E.V., Shubina K.Y., Berezovskaia T.N., Shtrom I.V., Bouravleuv A.D.
|
Vol 52, No 12 (2018) |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
 (Eng)
|
Polischuk O.V., Fateev D.V., Popov V.V.
|
Vol 52, No 11 (2018) |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
 (Eng)
|
Kozlov D.V., Rumyantsev V.V., Morozov S.V., Kadykov A.M., Fadeev M.A., Hübers H., Gavrilenko V.I.
|
Vol 52, No 11 (2018) |
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices |
 (Eng)
|
Pavelyev D.G., Vasilev A.P., Kozlov V.A., Obolenskaya E.S.
|
Vol 52, No 11 (2018) |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
 (Eng)
|
Rumyantsev V.V., Kulikov N.S., Kadykov A.M., Fadeev M.A., Ikonnikov A.V., Kazakov A.S., Zholudev M.S., Aleshkin V.Y., Utochkin V.V., Mikhailov N.N., Dvoretskii S.A., Morozov S.V., Gavrilenko V.I.
|
Vol 52, No 11 (2018) |
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface |
 (Eng)
|
Rudin S.A., Smagina Z.V., Zinovyev V.A., Novikov P.L., Nenashev A.V., Rodyakina E.E., Dvurechenskii A.V.
|
Vol 52, No 11 (2018) |
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz |
 (Eng)
|
Khabibullin R.A., Shchavruk N.V., Ponomarev D.S., Ushakov D.V., Afonenko A.A., Vasil’evskii I.S., Zaycev A.A., Danilov A.I., Volkov O.Y., Pavlovskiy V.V., Maremyanin K.V., Gavrilenko V.I.
|
Vol 52, No 11 (2018) |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
 (Eng)
|
Zhukov A.E., Gordeev N.Y., Shernyakov Y.M., Payusov A.S., Serin A.A., Kulagina M.M., Mintairov S.A., Kalyuzhnyy N.A., Maximov M.V.
|
Vol 52, No 11 (2018) |
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T |
 (Eng)
|
Bovkun L.S., Maremyanin K.V., Ikonnikov A.V., Spirin K.E., Aleshkin V.Y., Potemski M., Piot B.A., Orlita M., Mikhailov N.N., Dvoretskii S.A., Gavrilenko V.I.
|
Vol 52, No 11 (2018) |
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells |
 (Eng)
|
Dobretsova A.A., Kvon Z.D., Braginskii L.S., Entin M.V., Mikhailov N.N.
|
Vol 52, No 11 (2018) |
Spinodal Decomposition in InSb/AlAs Heterostructures |
 (Eng)
|
Abramkin D.S., Bakarov A.K., Gutakovskii A.K., Shamirzaev T.S.
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