| Шығарылым |
Атауы |
Файл |
| Том 53, № 12 (2019) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
(Eng)
|
|
Levin R., Vlasov A., Smirnov A., Pushnyi B.
|
| Том 53, № 11 (2019) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
(Eng)
|
|
Titov A., Karabeshkin K., Karaseov P., Struchkov A.
|
| Том 53, № 8 (2019) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
(Eng)
|
|
Tyschenko I., Voelskow M., Mikhaylov A., Tetelbaum D.
|
| Том 53, № 8 (2019) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
(Eng)
|
|
Balakshin Y., Kozhemiako A., Petrovic S., Erich M., Shemukhin A., Chernysh V.
|
| Том 53, № 6 (2019) |
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |
(Eng)
|
|
Pechnikov A., Stepanov S., Chikiryaka A., Scheglov M., Odnobludov M., Nikolaev V.
|
| Том 53, № 4 (2019) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
(Eng)
|
|
Sobolev N., Sakharov V., Serenkov I., Bondarev A., Karabeshkin K., Fomin E., Kalyadin A., Mikoushkin V., Shek E., Sherstnev E.
|
| Том 53, № 4 (2019) |
Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon |
(Eng)
|
|
Orlov V., Yarykin N., Yakimov E.
|
| Том 53, № 3 (2019) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
(Eng)
|
|
Badalova Z., Abdullayev N., Azhdarov G., Aliguliyeva K., Gahramanov S., Nemov S., Mamedov N.
|
| Том 53, № 3 (2019) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
(Eng)
|
|
Shuman V., Lodygin A., Portsel L., Yakovleva A., Abrosimov N., Astrov Y.
|
| Том 52, № 13 (2018) |
McCurdy’s Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow |
(Eng)
|
|
Kuleyev I., Kuleyev I., Bakharev S.
|
| Том 52, № 13 (2018) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
(Eng)
|
|
Seredin P., Leiste H., Beltiukov A., Arsentyev I., Mizerov A., Khudyakov Y., Lenshin A., Kondrashin M., Zolotukhin D., Goloshchapov D., Rinke M.
|
| Том 52, № 8 (2018) |
Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure |
(Eng)
|
|
Kogai V., Mikheev G.
|
| Том 52, № 8 (2018) |
Formation of Precipitates in Si Implanted with 64Zn+ and 16O+ Ions |
(Eng)
|
|
Privezentsev V., Kirilenko E., Goryachev A., Lutzau A.
|
| Том 52, № 8 (2018) |
Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits |
(Eng)
|
|
Matukhin V., Pogoreltsev A., Gavrilenko A., Garkavyi S., Shmidt E., Babaeva S., Sukhanova A., Terukov E.
|
| Том 52, № 7 (2018) |
Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions |
(Eng)
|
|
Kurchatov I., Kustov E.
|
| Том 52, № 2 (2018) |
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons |
(Eng)
|
|
Yafarov R.
|
| Том 51, № 9 (2017) |
Residual stresses in silicon and their evolution upon heat treatment and irradiation |
(Eng)
|
|
Matyash I., Minailova I., Serdega B., Khirunenko L.
|
| Том 51, № 8 (2017) |
Mn0.1Ag0.9In4.7S7.6 single crystals: Crystal structure, band gap, and thermal expansion |
(Eng)
|
|
Bodnar I., Tkhan C.
|
| Том 51, № 8 (2017) |
High-temperature diffusion of magnesium in dislocation-free silicon |
(Eng)
|
|
Shuman V., Astrov Y., Lodygin A., Portsel L.
|
| Том 51, № 6 (2017) |
Polymorphic transformations and thermal expansion in AgCuSe0.5(S,Te)0.5 crystals |
(Eng)
|
|
Aliyev Y., Asadov Y., Aliyeva R., Jabarov S.
|
| Том 51, № 6 (2017) |
On a neutron detector based on TlInSe2 crystals intercalated with a lithium isotope |
(Eng)
|
|
Alekseev I., Goremychkin E., Gundorin N., Petrenko A., Sashin I.
|
| Том 51, № 6 (2017) |
Study of the distribution profile of iron ions implanted into silicon |
(Eng)
|
|
Kozhemyako A., Balakshin Y., Shemukhin A., Chernysh V.
|
| Том 51, № 5 (2017) |
Negative annealing in silicon after the implantation of high-energy sodium ions |
(Eng)
|
|
Korol’ V., Zastavnoi A., Kudriavtsev Y., Asomoza R.
|
| Том 51, № 3 (2017) |
Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion |
(Eng)
|
|
Bodnar I., Zhafar M., Kasyuk Y., Fedotova Y.
|
| Том 51, № 3 (2017) |
Crystal defects in solar cells produced by the method of thermomigration |
(Eng)
|
|
Lozovskii V., Lomov A., Lunin L., Seredin B., Chesnokov Y.
|
| Нәтижелер 33 - 1/25 |
1 2 > >>
|
