| Issue |
Title |
File |
| Vol 51, No 1 (2017) |
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
(Eng)
|
|
Khairnar A.G., Patil V.S., Agrawal K.S., Salunke R.S., Mahajan A.M.
|
| Vol 51, No 1 (2017) |
Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study |
(Eng)
|
|
Rad A.S.
|
| Vol 50, No 10 (2016) |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
(Eng)
|
|
Tomosh K.N., Pavlov A.Y., Pavlov V.Y., Khabibullin R.A., Arutyunyan S.S., Maltsev P.P.
|
| Vol 50, No 9 (2016) |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
(Eng)
|
|
Tsatsulnikov A.F., Lundin W.V., Sakharov A.V., Zavarin E.E., Usov S.O., Nikolaev A.E., Yagovkina M.A., Ustinov V.M., Cherkashin N.A.
|
| Vol 50, No 9 (2016) |
Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
(Eng)
|
|
Shengurov V.G., Chalkov V.Y., Denisov S.A., Matveev S.A., Nezhdanov A.V., Mashin A.I., Filatov D.O., Stepikhova M.V., Krasilnik Z.F.
|
| Vol 50, No 9 (2016) |
Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells |
(Eng)
|
|
Lashkova N.A., Maximov A.I., Ryabko A.A., Bobkov A.A., Moshnikov V.A., Terukov E.I.
|
| Vol 50, No 9 (2016) |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
(Eng)
|
|
Seredin P.V., Goloshchapov D.L., Lenshin A.S., Lukin A.N., Fedyukin A.V., Arsentyev I.N., Bondarev A.D., Lubyanskiy Y.V., Tarasov I.S.
|
| Vol 50, No 9 (2016) |
Formation of the low-resistivity compound Cu3Ge by low-temperature treatment in an atomic hydrogen flux |
(Eng)
|
|
Erofeev E.V., Kazimirov A.I., Fedin I.V., Kagadei V.A.
|
| Vol 50, No 8 (2016) |
Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation |
(Eng)
|
|
Aleksandrov P.A., Baranova E.K., Budaragin V.V.
|
| Vol 50, No 8 (2016) |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
(Eng)
|
|
Serafimovich P.G., Stepikhova M.V., Kazanskiy N.L., Gusev S.A., Egorov A.V., Skorokhodov E.V., Krasilnik Z.F.
|
| Vol 50, No 8 (2016) |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
(Eng)
|
|
Arutyunyan S.S., Pavlov A.Y., Pavlov B.Y., Tomosh K.N., Fedorov Y.V.
|
| Vol 50, No 8 (2016) |
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies |
(Eng)
|
|
Pokotilo Y.M., Petukh A.N., Litvinov V.V., Markevich V.P., Abrosimov N.V., Kamyshan A.S., Giro A.V., Solyanikova K.A.
|
| Vol 50, No 8 (2016) |
Changes in the conductivity of lead-selenide thin films after plasma etching |
(Eng)
|
|
Zimin S.P., Amirov I.I., Naumov V.V.
|
| Vol 50, No 7 (2016) |
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy |
(Eng)
|
|
Parkhomenko Y.A., Dement’ev P.A., Moiseev K.D.
|
| Vol 50, No 7 (2016) |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
(Eng)
|
|
Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Sharofidinov S.S., Golovatenko A.A., Nikitina I.P., Smirnov A.N., Bugrov V.E., Romanov A.E., Brunkov P.N., Kirilenko D.A.
|
| Vol 50, No 7 (2016) |
Technique for forming ITO films with a controlled refractive index |
(Eng)
|
|
Kukushkin M.V., Zakheim D.A., Pavlov S.I., Markov L.K., Smirnova I.P., Pavluchenko A.S.
|
| Vol 50, No 6 (2016) |
On the photon annealing of silicon-implanted gallium-nitride layers |
(Eng)
|
|
Seleznev B.I., Moskalev G.Y., Fedorov D.G.
|
| Vol 50, No 6 (2016) |
The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties |
(Eng)
|
|
Lyagaeva Y.G., Vdovin G.K., Nikolaenko I.V., Medvedev D.A., Demin A.K.
|
| Vol 50, No 6 (2016) |
Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids |
(Eng)
|
|
Matyushkin L.B., Ryzhov O.A., Aleksandrova O.A., Moshnikov V.A.
|
| Vol 50, No 5 (2016) |
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure |
(Eng)
|
|
Gusev A.I., Sadovnikov S.I.
|
| Vol 50, No 5 (2016) |
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates |
(Eng)
|
|
Kozlovskiy V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Temiryazev A.G.
|
| Vol 50, No 5 (2016) |
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon |
(Eng)
|
|
Guk I.V., Shandybina G.D., Yakovlev E.B.
|
| Vol 50, No 5 (2016) |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
(Eng)
|
|
Virko M.V., Kogotkov V.S., Leonidov A.A., Voronenkov V.V., Rebane Y.T., Zubrilov A.S., Gorbunov R.I., Latyshev P.E., Bochkareva N.I., Lelikov Y.S., Tarhin D.V., Smirnov A.N., Davydov V.Y., Shreter Y.G.
|
| Vol 50, No 4 (2016) |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
(Eng)
|
|
Sharofidinov S.S., Nikolaev V.I., Smirnov A.N., Chikiryaka A.V., Nikitina I.P., Odnoblyudov M.A., Bugrov V.E., Romanov A.E.
|
| Vol 50, No 4 (2016) |
Specific features of doping with antimony during the ion-beam crystallization of silicon |
(Eng)
|
|
Pashchenko A.S., Chebotarev S.N., Lunin L.S., Irkha V.A.
|
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