| Шығарылым |
Атауы |
Файл |
| Том 51, № 1 (2017) |
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
(Eng)
|
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Khairnar A., Patil V., Agrawal K., Salunke R., Mahajan A.
|
| Том 51, № 1 (2017) |
Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study |
(Eng)
|
|
Rad A.
|
| Том 50, № 10 (2016) |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
(Eng)
|
|
Tomosh K., Pavlov A., Pavlov V., Khabibullin R., Arutyunyan S., Maltsev P.
|
| Том 50, № 9 (2016) |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
(Eng)
|
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Seredin P., Goloshchapov D., Lenshin A., Lukin A., Fedyukin A., Arsentyev I., Bondarev A., Lubyanskiy Y., Tarasov I.
|
| Том 50, № 9 (2016) |
Formation of the low-resistivity compound Cu3Ge by low-temperature treatment in an atomic hydrogen flux |
(Eng)
|
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Erofeev E., Kazimirov A., Fedin I., Kagadei V.
|
| Том 50, № 9 (2016) |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
(Eng)
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Tsatsulnikov A., Lundin W., Sakharov A., Zavarin E., Usov S., Nikolaev A., Yagovkina M., Ustinov V., Cherkashin N.
|
| Том 50, № 9 (2016) |
Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
(Eng)
|
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Shengurov V., Chalkov V., Denisov S., Matveev S., Nezhdanov A., Mashin A., Filatov D., Stepikhova M., Krasilnik Z.
|
| Том 50, № 9 (2016) |
Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells |
(Eng)
|
|
Lashkova N., Maximov A., Ryabko A., Bobkov A., Moshnikov V., Terukov E.
|
| Том 50, № 8 (2016) |
Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation |
(Eng)
|
|
Aleksandrov P., Baranova E., Budaragin V.
|
| Том 50, № 8 (2016) |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
(Eng)
|
|
Serafimovich P., Stepikhova M., Kazanskiy N., Gusev S., Egorov A., Skorokhodov E., Krasilnik Z.
|
| Том 50, № 8 (2016) |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
(Eng)
|
|
Arutyunyan S., Pavlov A., Pavlov B., Tomosh K., Fedorov Y.
|
| Том 50, № 8 (2016) |
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies |
(Eng)
|
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Pokotilo Y., Petukh A., Litvinov V., Markevich V., Abrosimov N., Kamyshan A., Giro A., Solyanikova K.
|
| Том 50, № 8 (2016) |
Changes in the conductivity of lead-selenide thin films after plasma etching |
(Eng)
|
|
Zimin S., Amirov I., Naumov V.
|
| Том 50, № 7 (2016) |
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy |
(Eng)
|
|
Parkhomenko Y., Dement’ev P., Moiseev K.
|
| Том 50, № 7 (2016) |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
(Eng)
|
|
Nikolaev V., Pechnikov A., Stepanov S., Sharofidinov S., Golovatenko A., Nikitina I., Smirnov A., Bugrov V., Romanov A., Brunkov P., Kirilenko D.
|
| Том 50, № 7 (2016) |
Technique for forming ITO films with a controlled refractive index |
(Eng)
|
|
Kukushkin M., Zakheim D., Pavlov S., Markov L., Smirnova I., Pavluchenko A.
|
| Том 50, № 6 (2016) |
On the photon annealing of silicon-implanted gallium-nitride layers |
(Eng)
|
|
Seleznev B., Moskalev G., Fedorov D.
|
| Том 50, № 6 (2016) |
The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties |
(Eng)
|
|
Lyagaeva Y., Vdovin G., Nikolaenko I., Medvedev D., Demin A.
|
| Том 50, № 6 (2016) |
Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids |
(Eng)
|
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Matyushkin L., Ryzhov O., Aleksandrova O., Moshnikov V.
|
| Том 50, № 5 (2016) |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
(Eng)
|
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Virko M., Kogotkov V., Leonidov A., Voronenkov V., Rebane Y., Zubrilov A., Gorbunov R., Latyshev P., Bochkareva N., Lelikov Y., Tarhin D., Smirnov A., Davydov V., Shreter Y.
|
| Том 50, № 5 (2016) |
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure |
(Eng)
|
|
Gusev A., Sadovnikov S.
|
| Том 50, № 5 (2016) |
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates |
(Eng)
|
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Kozlovskiy V., Krivobok V., Kuznetsov P., Nikolaev S., Onistchenko E., Pruchkina A., Temiryazev A.
|
| Том 50, № 5 (2016) |
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon |
(Eng)
|
|
Guk I., Shandybina G., Yakovlev E.
|
| Том 50, № 4 (2016) |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
(Eng)
|
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Sharofidinov S., Nikolaev V., Smirnov A., Chikiryaka A., Nikitina I., Odnoblyudov M., Bugrov V., Romanov A.
|
| Том 50, № 4 (2016) |
Specific features of doping with antimony during the ion-beam crystallization of silicon |
(Eng)
|
|
Pashchenko A., Chebotarev S., Lunin L., Irkha V.
|
| Нәтижелер 135 - 101/125 |
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