On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

Abstract

The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n⁺-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n⁺-GaN films.