On the laser detachment of  n -GaN films from substrates, based on the strong absorption of IR light by free charge carriers in  n  + -GaN substrates

M. V. Virko; V. S. Kogotkov; A. A. Leonidov; V. V. Voronenkov; Yu. T. Rebane; A. S. Zubrilov; R. I. Gorbunov; P. E. Latyshev; N. I. Bochkareva; Yu. S. Lelikov; D. V. Tarhin; A. N. Smirnov; V. Yu. Davydov; Yu. G. Shreter

doi:10.1134/S1063782616050250

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n⁺-GaN substrates

Autores: Virko M.V.¹, Kogotkov V.S.¹, Leonidov A.A.¹, Voronenkov V.V.², Rebane Y.T.², Zubrilov A.S.², Gorbunov R.I.², Latyshev P.E.², Bochkareva N.I.², Lelikov Y.S.², Tarhin D.V.², Smirnov A.N.², Davydov V.Y.², Shreter Y.G.²
Afiliações:
1. Peter the Great St. Petersburg Polytechnic University
2. Ioffe Physical–Technical Institute
Edição: Volume 50, Nº 5 (2016)
Páginas: 699-704
Seção: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://bakhtiniada.ru/1063-7826/article/view/197175
DOI: https://doi.org/10.1134/S1063782616050250
ID: 197175

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The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n⁺-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n⁺-GaN films.