Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The conditions of the epitaxial growth of high-quality relaxed Si1–xGex layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si1–xGex layers with a thickness of up to 2 µm and larger. At reduced growth temperatures (TS = 325–350°C), the procedure allows the growth of Si1–xGex layers with a small surface roughness (rms ≈ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si1–xGex:Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions (TS ≈ 500°C) and possess an external quantum efficiency estimated at a level of ~0.4%.

作者简介

V. Shengurov

Physical Technical Research Institute

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

V. Chalkov

Physical Technical Research Institute

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

S. Denisov

Physical Technical Research Institute

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

S. Matveev

Nizhny Novgorod State University

编辑信件的主要联系方式.
Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

A. Nezhdanov

Nizhny Novgorod State University

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

A. Mashin

Nizhny Novgorod State University

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

D. Filatov

Physical Technical Research Institute

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950

M. Stepikhova

Nizhny Novgorod State University; Institute for Physics of Microstructures

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod oblast, 607680

Z. Krasilnik

Nizhny Novgorod State University; Institute for Physics of Microstructures

Email: matveevsa.sou@gmail.com
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod oblast, 607680

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2016