| Шығарылым |
Атауы |
Файл |
| Том 52, № 1 (2018) |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
(Eng)
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Nadtochiy A., Mintairov S., Kalyuzhnyy N., Rouvimov S., Nevedomskii V., Maximov M., Zhukov A.
|
| Том 52, № 1 (2018) |
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots |
(Eng)
|
|
Sofronov A., Balagula R., Firsov D., Vorobjev L., Tonkikh A., Sarkisyan H., Hayrapetyan D., Petrosyan L., Kazaryan E.
|
| Том 51, № 12 (2017) |
Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions |
(Eng)
|
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Hlali S., Hizem N., Kalboussi A.
|
| Том 51, № 12 (2017) |
Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer |
(Eng)
|
|
Rayerfrancis A., Balaji B., Ahmed N., Balaji C.
|
| Том 51, № 10 (2017) |
Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation |
(Eng)
|
|
Bondarenko V., Filimonov A.
|
| Том 51, № 10 (2017) |
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots |
(Eng)
|
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Bayramov F., Poloskin E., Chernev A., Toropov V., Dubina M., Bairamov B.
|
| Том 51, № 10 (2017) |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
(Eng)
|
|
Zubov F., Semenova E., Kulkova I., Yvind K., Kryzhanovskaya N., Maximov M., Zhukov A.
|
| Том 51, № 10 (2017) |
Photoluminescence of perovskite CsPbX3 (X = Cl, Br, I) nanocrystals and solid solutions on their basis |
(Eng)
|
|
Matyushkin L., Moshnikov V.
|
| Том 51, № 10 (2017) |
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field |
(Eng)
|
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Mikhailova M., Berezovets V., Parfeniev R., Danilov L., Safonchik M., Hospodková A., Pangrác J., Hulicius E.
|
| Том 51, № 10 (2017) |
Mechanism of resistive switching in films based on partially fluorinated graphene |
(Eng)
|
|
Ivanov A., Nebogatikova N., Kurkina I., Antonova I.
|
| Том 51, № 10 (2017) |
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity |
(Eng)
|
|
Oveshnikov L., Nekhaeva E.
|
| Том 51, № 9 (2017) |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
(Eng)
|
|
Moiseev K., Nevedomsky V., Kudriavtsev Y., Escobosa-Echavarria A., Lopez-Lopez M.
|
| Том 51, № 9 (2017) |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
(Eng)
|
|
Danilov L., Mikhailova M., Andreev I., Zegrya G.
|
| Том 51, № 8 (2017) |
On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account |
(Eng)
|
|
Kerimi M.
|
| Том 51, № 8 (2017) |
Influence of traps in silicon dioxide on the breakdown of MOS structures |
(Eng)
|
|
Aleksandrov O.
|
| Том 51, № 7 (2017) |
Purcell effect in disordered one-dimensional photonic crystals |
(Eng)
|
|
Gubaydullin A., Ivanov K., Nikolaev V., Kaliteevski M.
|
| Том 51, № 6 (2017) |
Classical magnetoresistance of a two-component system induced by thermoelectric effects |
(Eng)
|
|
Alekseev P., Gornyi I., Dmitriev A., Kachorovskii V., Semina M.
|
| Том 51, № 5 (2017) |
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions |
(Eng)
|
|
Askerov S., Abdullayeva L., Hasanov M.
|
| Том 51, № 5 (2017) |
Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field |
(Eng)
|
|
Pashkovskii A.
|
| Том 51, № 5 (2017) |
Injection-induced terahertz electroluminescence from silicon p–n structures |
(Eng)
|
|
Zakhar’in A., Vasilyev Y., Sobolev N., Zabrodskii V., Egorov S., Andrianov A.
|
| Том 51, № 5 (2017) |
Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures |
(Eng)
|
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Kononov N., Dorofeev S.
|
| Том 51, № 5 (2017) |
Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1 |
(Eng)
|
|
Basalaev Y., Malysheva E.
|
| Том 51, № 5 (2017) |
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |
(Eng)
|
|
Grashchenko A., Feoktistov N., Osipov A., Kalinina E., Kukushkin S.
|
| Том 51, № 4 (2017) |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
(Eng)
|
|
Slapovskiy D., Pavlov A., Pavlov V., Klekovkin A.
|
| Том 51, № 4 (2017) |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
(Eng)
|
|
Vexler M., Illarionov Y., Grekhov I.
|
| Нәтижелер 162 - 76/100 |
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