| Issue |
Title |
File |
| Vol 52, No 1 (2018) |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
(Eng)
|
|
Nadtochiy A.M., Mintairov S.A., Kalyuzhnyy N.A., Rouvimov S.S., Nevedomskii V.N., Maximov M.V., Zhukov A.E.
|
| Vol 52, No 1 (2018) |
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots |
(Eng)
|
|
Sofronov A.N., Balagula R.M., Firsov D.A., Vorobjev L.E., Tonkikh A.A., Sarkisyan H.A., Hayrapetyan D.B., Petrosyan L.S., Kazaryan E.M.
|
| Vol 51, No 12 (2017) |
Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions |
(Eng)
|
|
Hlali S., Hizem N., Kalboussi A.
|
| Vol 51, No 12 (2017) |
Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer |
(Eng)
|
|
Rayerfrancis A., Balaji B.P., Ahmed N., Balaji C.
|
| Vol 51, No 10 (2017) |
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field |
(Eng)
|
|
Mikhailova M.P., Berezovets V.A., Parfeniev R.V., Danilov L.V., Safonchik M.O., Hospodková A., Pangrác J., Hulicius E.
|
| Vol 51, No 10 (2017) |
Mechanism of resistive switching in films based on partially fluorinated graphene |
(Eng)
|
|
Ivanov A.I., Nebogatikova N.A., Kurkina I.I., Antonova I.V.
|
| Vol 51, No 10 (2017) |
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity |
(Eng)
|
|
Oveshnikov L.N., Nekhaeva E.I.
|
| Vol 51, No 10 (2017) |
Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation |
(Eng)
|
|
Bondarenko V.B., Filimonov A.V.
|
| Vol 51, No 10 (2017) |
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots |
(Eng)
|
|
Bayramov F.B., Poloskin E.D., Chernev A.L., Toropov V.V., Dubina M.V., Bairamov B.K.
|
| Vol 51, No 10 (2017) |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
(Eng)
|
|
Zubov F.I., Semenova E.S., Kulkova I.V., Yvind K., Kryzhanovskaya N.V., Maximov M.V., Zhukov A.E.
|
| Vol 51, No 10 (2017) |
Photoluminescence of perovskite CsPbX3 (X = Cl, Br, I) nanocrystals and solid solutions on their basis |
(Eng)
|
|
Matyushkin L.B., Moshnikov V.A.
|
| Vol 51, No 9 (2017) |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
(Eng)
|
|
Moiseev K.D., Nevedomsky V.N., Kudriavtsev Y., Escobosa-Echavarria A., Lopez-Lopez M.
|
| Vol 51, No 9 (2017) |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
(Eng)
|
|
Danilov L.V., Mikhailova M.P., Andreev I.A., Zegrya G.G.
|
| Vol 51, No 8 (2017) |
On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account |
(Eng)
|
|
Kerimi M.B.
|
| Vol 51, No 8 (2017) |
Influence of traps in silicon dioxide on the breakdown of MOS structures |
(Eng)
|
|
Aleksandrov O.V.
|
| Vol 51, No 7 (2017) |
Purcell effect in disordered one-dimensional photonic crystals |
(Eng)
|
|
Gubaydullin A.R., Ivanov K.A., Nikolaev V.V., Kaliteevski M.A.
|
| Vol 51, No 6 (2017) |
Classical magnetoresistance of a two-component system induced by thermoelectric effects |
(Eng)
|
|
Alekseev P.S., Gornyi I.V., Dmitriev A.P., Kachorovskii V.Y., Semina M.A.
|
| Vol 51, No 5 (2017) |
Injection-induced terahertz electroluminescence from silicon p–n structures |
(Eng)
|
|
Zakhar’in A.O., Vasilyev Y.B., Sobolev N.A., Zabrodskii V.V., Egorov S.V., Andrianov A.V.
|
| Vol 51, No 5 (2017) |
Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures |
(Eng)
|
|
Kononov N.N., Dorofeev S.G.
|
| Vol 51, No 5 (2017) |
Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1 |
(Eng)
|
|
Basalaev Y.M., Malysheva E.N.
|
| Vol 51, No 5 (2017) |
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |
(Eng)
|
|
Grashchenko A.S., Feoktistov N.A., Osipov A.V., Kalinina E.V., Kukushkin S.A.
|
| Vol 51, No 5 (2017) |
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions |
(Eng)
|
|
Askerov S.Q., Abdullayeva L.K., Hasanov M.H.
|
| Vol 51, No 5 (2017) |
Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field |
(Eng)
|
|
Pashkovskii A.B.
|
| Vol 51, No 4 (2017) |
Electron mobility in the inversion layers of fully depleted SOI films |
(Eng)
|
|
Zaitseva E.G., Naumova O.V., Fomin B.I.
|
| Vol 51, No 4 (2017) |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions |
(Eng)
|
|
Pashkovskii A.B.
|
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