Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal–lnsulator–Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al2O3/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi–Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (CV), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device.

About the authors

Slah Hlali

Laboratoire de Microélectronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir, Avenue de I’environnement

Author for correspondence.
Email: hlalislah@yahoo.fr
Tunisia, Monastir, 5019

Neila Hizem

Laboratoire de Microélectronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir, Avenue de I’environnement

Email: hlalislah@yahoo.fr
Tunisia, Monastir, 5019

Adel Kalboussi

Laboratoire de Microélectronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir, Avenue de I’environnement

Email: hlalislah@yahoo.fr
Tunisia, Monastir, 5019

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2017 Pleiades Publishing, Ltd.