| Шығарылым |
Атауы |
Файл |
| Том 52, № 9 (2018) |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
(Eng)
|
|
Smagina Z., Zinovyev V., Krivyakin G., Rodyakina E., Kuchinskaya P., Fomin B., Yablonskiy A., Stepikhova M., Novikov A., Dvurechenskii A.
|
| Том 52, № 9 (2018) |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
(Eng)
|
|
Kolodeznyi E., Kurochkin A., Rochas S., Babichev A., Novikov I., Gladyshev A., Karachinsky L., Savelyev A., Egorov A., Denisov D.
|
| Том 52, № 9 (2018) |
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles |
(Eng)
|
|
Stovpiaga E., Eurov D., Kurdyukov D., Smirnov A., Yagovkina M., Yakovlev D., Golubev V.
|
| Том 52, № 9 (2018) |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
(Eng)
|
|
Orlov M., Volkova N., Ivina N., Orlov L.
|
| Том 52, № 9 (2018) |
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid |
(Eng)
|
|
Kondratenko T., Smirnov M., Ovchinnikov O., Shabunya-Klyachkovskaya E., Matsukovich A., Zvyagin A., Vinokur Y.
|
| Том 52, № 8 (2018) |
Nonlinear Optical Properties of CdS/ZnS Quantum Dots in a High-Molecular-Weight Polyvinylpyrrolidone Matrix |
(Eng)
|
|
Kulagina A., Evstropiev S., Rosanov N., Vlasov V.
|
| Том 52, № 8 (2018) |
Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |
(Eng)
|
|
Yakovlev G., Dorokhin M., Zubkov V., Dudin A., Zdoroveyshchev A., Malysheva E., Danilov Y., Zvonkov B., Kudrin A.
|
| Том 52, № 8 (2018) |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
(Eng)
|
|
Seredin P., Goloshchapov D., Zolotukhin D., Lenshin A., Lukin A., Khudyakov Y., Arsentyev I., Zhabotinsky A., Nikolaev D., Pikhtin N.
|
| Том 52, № 8 (2018) |
Photoluminescence of ZnS:Cu in a Polymethyl Methacrylate Matrix |
(Eng)
|
|
Smagin V., Eremina N., Leonov M.
|
| Том 52, № 8 (2018) |
Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au |
(Eng)
|
|
Zainabidinov S., Tursunov I., Khimmatkulov O.
|
| Том 52, № 8 (2018) |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
(Eng)
|
|
Vexler M.
|
| Том 52, № 8 (2018) |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
(Eng)
|
|
Mikhailova M., Andreev I., Konovalov G., Danilov L., Ivanov E., Kunitsyna E., Il’inskaya N., Levin R., Pushnyi B., Yakovlev Y.
|
| Том 52, № 7 (2018) |
Transverse Nernst–Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering |
(Eng)
|
|
Figarova S., Huseynov H., Figarov V.
|
| Том 52, № 7 (2018) |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
(Eng)
|
|
Parkhomenko H., Solovan M., Maryanchuk P.
|
| Том 52, № 7 (2018) |
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation |
(Eng)
|
|
Ponomarev D., Khabibullin R., Klochkov A., Yachmenev A., Bugaev A., Khusyainov D., Buriakov A., Bilyk V., Mishina E.
|
| Том 52, № 7 (2018) |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
(Eng)
|
|
Salii R., Kosarev I., Mintairov S., Nadtochiy A., Shvarts M., Kalyuzhnyy N.
|
| Том 52, № 7 (2018) |
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells |
(Eng)
|
|
Kaliteevski M., Nikitina E., Gubaidullin A., Ivanov K., Egorov A., Pozina G.
|
| Том 52, № 6 (2018) |
Study of the Properties of II–VI and III–V Semiconductor Quantum Dots |
(Eng)
|
|
Mikhailov A., Kabanov V., Gorbachev I., Glukhovsky E.
|
| Том 52, № 6 (2018) |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
(Eng)
|
|
Pashchenko A., Lunin L., Chebotarev S., Lunina M.
|
| Том 52, № 6 (2018) |
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method |
(Eng)
|
|
Pushkarev S., Grekhov M., Zenchenko N.
|
| Том 52, № 6 (2018) |
Quantum Oscillations of Photoconductivity Relaxation in p–i–n GaAs/InAs/AlAs Heterodiodes |
(Eng)
|
|
Khanin Y., Vdovin E.
|
| Том 52, № 6 (2018) |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
(Eng)
|
|
Babichev A., Kurochkin A., Kolodeznyi E., Filimonov A., Usikova A., Nevedomsky V., Gladyshev A., Karachinsky L., Novikov I., Egorov A.
|
| Том 52, № 2 (2018) |
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping |
(Eng)
|
|
Safonov D., Vinichenko A., Kargin N., Vasil’evskii I.
|
| Том 52, № 2 (2018) |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
(Eng)
|
|
Pavlov N., Zegrya G., Zegrya A., Bugrov V.
|
| Том 52, № 1 (2018) |
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths |
(Eng)
|
|
Protasov D., Bakarov A., Toropov A., Ber B., Kazantsev D., Zhuravlev K.
|
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