Email this article On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures
- Authors: Kolodeznyi E.S.1, Kurochkin A.S.1, Rochas S.S.1, Babichev A.V.1, Novikov I.I.1, Gladyshev A.G.1, Karachinsky L.Y.2, Savelyev A.V.1,3, Egorov A.Y.1, Denisov D.V.2,4
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Affiliations:
- ITMO University
- OOO Connector Optics
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- St. Petersburg State Electrotechnical University “LETI”
- Issue: Vol 52, No 9 (2018)
- Pages: 1156-1159
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/204021
- DOI: https://doi.org/10.1134/S1063782618090075
- ID: 204021
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Abstract
The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In0.74Ga0.26As quantum wells and δ-doped In0.53Al0.20Ga0.27As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 1012 cm–2 results in the suppression of nonradiative recombination.
About the authors
E. S. Kolodeznyi
ITMO University
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
A. S. Kurochkin
ITMO University
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
S. S. Rochas
ITMO University
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
A. V. Babichev
ITMO University
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
I. I. Novikov
ITMO University
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
A. G. Gladyshev
ITMO University
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
L. Ya. Karachinsky
OOO Connector Optics
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194292
A. V. Savelyev
ITMO University; St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101; St. Petersburg, 194021
A. Yu. Egorov
ITMO University
Author for correspondence.
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101
D. V. Denisov
OOO Connector Optics; St. Petersburg State Electrotechnical University “LETI”
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194292; St. Petersburg, 197376
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