Study of the Properties of II–VI and III–V Semiconductor Quantum Dots
- Авторлар: Mikhailov A.I.1, Kabanov V.F.1, Gorbachev I.A.1, Glukhovsky E.G.1
-
Мекемелер:
- Saratov State National Research University
- Шығарылым: Том 52, № 6 (2018)
- Беттер: 750-754
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/203500
- DOI: https://doi.org/10.1134/S1063782618060155
- ID: 203500
Дәйексөз келтіру
Аннотация
The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.
Авторлар туралы
A. Mikhailov
Saratov State National Research University
Email: v7021961@yandex.ru
Ресей, Saratov, 410012
V. Kabanov
Saratov State National Research University
Хат алмасуға жауапты Автор.
Email: v7021961@yandex.ru
Ресей, Saratov, 410012
I. Gorbachev
Saratov State National Research University
Email: v7021961@yandex.ru
Ресей, Saratov, 410012
E. Glukhovsky
Saratov State National Research University
Email: v7021961@yandex.ru
Ресей, Saratov, 410012
Қосымша файлдар
