电邮这篇文章 Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures
- 作者: Khanin Y.N.1, Vdovin E.E.1, Mishchenko A.2, Novoselov K.S.2
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隶属关系:
- Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
- School of Physics and Astronomy, University of Manchester
- 期: 卷 53, 编号 8 (2019)
- 页面: 1038-1041
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/206604
- DOI: https://doi.org/10.1134/S1063782619080104
- ID: 206604
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详细
Tunneling and magnetic tunneling are investigated in graphene/h-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h-BN barrier, and current caused by their presence is generated.
作者简介
Yu. Khanin
Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
Email: vdov62@yandex.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
E. Vdovin
Institute of Problems of Microelectronics Technology, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: vdov62@yandex.ru
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432
A. Mishchenko
School of Physics and Astronomy, University of Manchester
Email: vdov62@yandex.ru
英国, Manchester, Oxford Road, M13 9PL
K. Novoselov
School of Physics and Astronomy, University of Manchester
Email: vdov62@yandex.ru
英国, Manchester, Oxford Road, M13 9PL
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