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Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
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Рұқсат жабық Тек жазылушылар үшін

Аннотация

Tunneling and magnetic tunneling are investigated in graphene/h-BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h-BN barrier, and current caused by their presence is generated.

Авторлар туралы

Yu. Khanin

Institute of Problems of Microelectronics Technology, Russian Academy of Sciences

Email: vdov62@yandex.ru
Ресей, Chernogolovka, Moscow oblast, 142432

E. Vdovin

Institute of Problems of Microelectronics Technology, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: vdov62@yandex.ru
Ресей, Chernogolovka, Moscow oblast, 142432

A. Mishchenko

School of Physics and Astronomy, University of Manchester

Email: vdov62@yandex.ru
Ұлыбритания, Manchester, Oxford Road, M13 9PL

K. Novoselov

School of Physics and Astronomy, University of Manchester

Email: vdov62@yandex.ru
Ұлыбритания, Manchester, Oxford Road, M13 9PL

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