Enviar artigo por via de e-mail Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure
- Autores: Novodvorsky O.A.1, Mikhalevsky V.A.1, Gusev D.S.1, Lotin A.A.1, Parshina L.S.1, Khramova O.D.1, Cherebylo E.A.1, Drovosekov A.B.2, Rylkov V.V.3,4, Nikolaev S.N.3, Chernoglazov K.Y.3, Maslakov K.I.5
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Afiliações:
- Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”, Russian Academy of Sciences
- Kapitza Institute for Physical Problems, Russian Academy of Sciences
- National Research Center “Kurchatov Institute”
- Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Moscow State University
- Edição: Volume 52, Nº 11 (2018)
- Páginas: 1424-1427
- Seção: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://bakhtiniada.ru/1063-7826/article/view/204339
- DOI: https://doi.org/10.1134/S1063782618110179
- ID: 204339
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Resumo
A series of thin films of Si1 –xMnx alloys with a thickness from 50 to 100 nm grown by pulsed laser deposition on an Al2O3 substrate in vacuum and in an argon atmosphere is investigated. The significant effect of the buffer-gas pressure in the sputtering chamber on the structural and magnetic homogeneity of the obtained films is shown. The conditions for the formation of a ferromagnetic phase with a high Curie temperature (>300 K) in the samples are studied. With the use of the Langmuir probe method, the threshold of ablation of a MnSi target by second harmonic radiation (λ = 532 nm) of a Nd:YAG Q-switch laser is determined. The time-of-flight curves for the plume ions are obtained with a change in the energy density at the target and argon pressure in the sputtering chamber. A nonmonotonic dependence of the probe time-of-flight signal amplitude on the argon pressure is established for high-energy particles of the plume.
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Sobre autores
O. Novodvorsky
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Autor responsável pela correspondência
Email: onov@mail.ru
Rússia, Shatura, 140700
V. Mikhalevsky
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Shatura, 140700
D. Gusev
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Shatura, 140700
A. Lotin
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Shatura, 140700
L. Parshina
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Shatura, 140700
O. Khramova
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Shatura, 140700
E. Cherebylo
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Shatura, 140700
A. Drovosekov
Kapitza Institute for Physical Problems, Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Moscow, 119334
V. Rylkov
National Research Center “Kurchatov Institute”; Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics,Russian Academy of Sciences
Email: onov@mail.ru
Rússia, Moscow, 123182; Fryazino, 141190
S. Nikolaev
National Research Center “Kurchatov Institute”
Email: onov@mail.ru
Rússia, Moscow, 123182
K. Chernoglazov
National Research Center “Kurchatov Institute”
Email: onov@mail.ru
Rússia, Moscow, 123182
K. Maslakov
Moscow State University
Email: onov@mail.ru
Rússia, Moscow, 119991
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