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Optical thyristor based on GaAs/InGaP materials


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Abstract

The possibility of creating thyristor structures with external optical control by laser radiation with a wavelength of ~800 nm, based on single-crystal wafers of semi-insulating GaAs and layers of InGaP with the lattice parameter compatible with GaAs, is shown.

About the authors

B. N. Zvonkov

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

N. V. Baidus

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

S. M. Nekorkin

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

O. V. Vikhrova

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

A. V. Zdoroveyshev

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

A. V. Kudrin

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

V. E. Kotomina

Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod

Email: vikhrova@nifti.unn.ru
Russian Federation, Nizhny Novgorod, 603950

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