Email this article Planar Magnetotransistor with Compensation of Collector Current
- Authors: Tikhonov R.D.1
-
Affiliations:
- Technological Center, National Research University of Electronic Technology (MIET)
- Issue: Vol 60, No 8 (2017)
- Pages: 831-838
- Section: Article
- URL: https://bakhtiniada.ru/0543-1972/article/view/246257
- DOI: https://doi.org/10.1007/s11018-017-1278-0
- ID: 246257
Cite item
Open Access
Access granted
Subscription Access
Abstract
The design of a magnetotransistor with two contacts to the base for the purpose of increasing the sensitivity of a planar magnetotransistor is investigated. The possibility of creating a magnetotransistor with compensation of collector currents based on the use of the technology of heterojunction bipolar transistors is considered.
About the authors
R. D. Tikhonov
Technological Center, National Research University of Electronic Technology (MIET)
Author for correspondence.
Email: R.Tikhonov@tcen.ru
Russian Federation, Moscow
Supplementary files
