Enviar artigo por via de e-mail Planar Magnetotransistor with Compensation of Collector Current
- Autores: Tikhonov R.D.1
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Afiliações:
- Technological Center, National Research University of Electronic Technology (MIET)
- Edição: Volume 60, Nº 8 (2017)
- Páginas: 831-838
- Seção: Article
- URL: https://bakhtiniada.ru/0543-1972/article/view/246257
- DOI: https://doi.org/10.1007/s11018-017-1278-0
- ID: 246257
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Resumo
The design of a magnetotransistor with two contacts to the base for the purpose of increasing the sensitivity of a planar magnetotransistor is investigated. The possibility of creating a magnetotransistor with compensation of collector currents based on the use of the technology of heterojunction bipolar transistors is considered.
Sobre autores
R. Tikhonov
Technological Center, National Research University of Electronic Technology (MIET)
Autor responsável pela correspondência
Email: R.Tikhonov@tcen.ru
Rússia, Moscow
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