Email this article The Determining Role of the (HF2)– Ion in the Formation of Pores in Silicon in Its Electrochemical Etching with Hydrofluoric Acid Solutions
- Authors: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Slipchenko E.A.1, Kornilova D.S.1, Tsygankova M.V.1, Shvets V.I.1
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Affiliations:
- Institute of Fine Chemical Technologies
- Issue: Vol 63, No 9 (2018)
- Pages: 1236-1242
- Section: Physical Chemistry of Solutions
- URL: https://bakhtiniada.ru/0036-0236/article/view/168996
- DOI: https://doi.org/10.1134/S0036023618090024
- ID: 168996
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Abstract
A model of the chemical interaction of Si with the (HF2)– ion was propsoed to explain some experimental data on the formation of porous silicon.
About the authors
E. N. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
A. M. Khort
Institute of Fine Chemical Technologies
Author for correspondence.
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
A. G. Yakovenko
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
E. A. Slipchenko
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
D. S. Kornilova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
M. V. Tsygankova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
V. I. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
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