Spin-Polarized Electron Injection into an InSb Semiconductor


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The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.

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N. Viglin

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

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Email: viglin@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108

N. Bebenin

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

Email: viglin@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108

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