Spin-Polarized Electron Injection into an InSb Semiconductor
- 作者: Viglin N.A.1, Bebenin N.G.1
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隶属关系:
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- 期: 卷 119, 编号 13 (2018)
- 页面: 1289-1292
- 栏目: Electrical and Magnetic Properties
- URL: https://bakhtiniada.ru/0031-918X/article/view/168106
- DOI: https://doi.org/10.1134/S0031918X18130136
- ID: 168106
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详细
The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.
作者简介
N. Viglin
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: viglin@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108
N. Bebenin
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: viglin@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108
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