Spin-Polarized Electron Injection into an InSb Semiconductor


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Resumo

The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.

Sobre autores

N. Viglin

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

Autor responsável pela correspondência
Email: viglin@imp.uran.ru
Rússia, Ekaterinburg, 620108

N. Bebenin

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

Email: viglin@imp.uran.ru
Rússia, Ekaterinburg, 620108

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