Spin-Polarized Electron Injection into an InSb Semiconductor

Аннотация

The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.