An Instrument for Highly Specific Detection of Biomarkers on a Quartz Resonator
- 作者: Dultsev F.N.1,2, Nekrasov D.V.1, Kolosovsky E.A.1, Gusachenko A.V.3, Moiseev A.A.3, Vasilev V.V.3
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- 期: 卷 62, 编号 1 (2019)
- 页面: 78-84
- 栏目: Physical Instruments for Ecology, Medicine, and Biology
- URL: https://bakhtiniada.ru/0020-4412/article/view/160552
- DOI: https://doi.org/10.1134/S0020441219010044
- ID: 160552
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详细
An instrument has been developed for measuring the force of affine interactions, in particular, in biological systems. The structure of the instrument is described. It includes a replaceable cartridge with a quartz resonator for analyzing various biosystems by measuring the signal of detachment of molecules from the resonator surface. The instrument is a sensor device with which it is possible to analyze various biological objects, including viruses and bacteria, as well as to carry out DNA identification. Software has been developed to automate the processing of results and the identification of objects. The instrument can be used to carry out express analysis in medical institutions and research laboratories.
作者简介
F. Dultsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
编辑信件的主要联系方式.
Email: fdultsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
D. Nekrasov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
E. Kolosovsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Gusachenko
Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Instituteof Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Moiseev
Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Instituteof Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Vasilev
Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Instituteof Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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