An Instrument for Highly Specific Detection of Biomarkers on a Quartz Resonator
- Authors: Dultsev F.N.1,2, Nekrasov D.V.1, Kolosovsky E.A.1, Gusachenko A.V.3, Moiseev A.A.3, Vasilev V.V.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 62, No 1 (2019)
- Pages: 78-84
- Section: Physical Instruments for Ecology, Medicine, and Biology
- URL: https://bakhtiniada.ru/0020-4412/article/view/160552
- DOI: https://doi.org/10.1134/S0020441219010044
- ID: 160552
Cite item
Abstract
An instrument has been developed for measuring the force of affine interactions, in particular, in biological systems. The structure of the instrument is described. It includes a replaceable cartridge with a quartz resonator for analyzing various biosystems by measuring the signal of detachment of molecules from the resonator surface. The instrument is a sensor device with which it is possible to analyze various biological objects, including viruses and bacteria, as well as to carry out DNA identification. Software has been developed to automate the processing of results and the identification of objects. The instrument can be used to carry out express analysis in medical institutions and research laboratories.
About the authors
F. N. Dultsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: fdultsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
D. V. Nekrasov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
E. A. Kolosovsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Gusachenko
Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Instituteof Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. A. Moiseev
Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Instituteof Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. V. Vasilev
Technological Design Institute of Applied Microelectronics, Novosibirsk Branch of the Rzhanov Instituteof Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: fdultsev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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