A stabilizer of micro- and small currents based on a field hall-effect sensor with autocompensation of the temperature effect

Abstract

A stabilizer of micro- and small currents based on a field Hall-effect sensor is considered. The field-effect Hall sensor is an integration of a conventional Si Hall element and an Si thin-film doublegate field-effect transistor. It is shown that formation of feedbacks between Hall contacts, field gates, and power sources makes it possible to stabilize the sensor current with accuracy of not worse than 1% when the load resistance changes by an order and the temperature varies in the 25–65°C range.