A stabilizer of micro- and small currents based on a field hall-effect sensor with autocompensation of the temperature effect
- Авторы: Leonov A.V.1, Pavlyuk M.I.2
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Учреждения:
- Institute of Microelectronic Technology and Ultra-High-Purity Materials
- JSC ICC Milandr
- Выпуск: Том 59, № 6 (2016)
- Страницы: 808-809
- Раздел: Electronics and Radio Engineering
- URL: https://bakhtiniada.ru/0020-4412/article/view/159369
- DOI: https://doi.org/10.1134/S0020441216060026
- ID: 159369
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Аннотация
A stabilizer of micro- and small currents based on a field Hall-effect sensor is considered. The field-effect Hall sensor is an integration of a conventional Si Hall element and an Si thin-film doublegate field-effect transistor. It is shown that formation of feedbacks between Hall contacts, field gates, and power sources makes it possible to stabilize the sensor current with accuracy of not worse than 1% when the load resistance changes by an order and the temperature varies in the 25–65°C range.
Об авторах
A. Leonov
Institute of Microelectronic Technology and Ultra-High-Purity Materials
Автор, ответственный за переписку.
Email: alex25.08@mail.ru
Россия, Chernogolovka, Moscow oblast, 142432
M. Pavlyuk
JSC ICC Milandr
Email: alex25.08@mail.ru
Россия, Zelenograd, Moscow, 124498
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