电邮这篇文章 Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors
- 作者: Malashin M.V.1, Moshkunov S.I.1, Khomich V.Y.1
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隶属关系:
- Institute for Electrophysics and Electric Power
- 期: 卷 59, 编号 2 (2016)
- 页面: 222-225
- 栏目: Electronics and Radio Engineering
- URL: https://bakhtiniada.ru/0020-4412/article/view/158941
- DOI: https://doi.org/10.1134/S0020441216020081
- ID: 158941
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详细
The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.
作者简介
M. Malashin
Institute for Electrophysics and Electric Power
编辑信件的主要联系方式.
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
S. Moshkunov
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
V. Khomich
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
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