Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors


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The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.

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M. Malashin

Institute for Electrophysics and Electric Power

编辑信件的主要联系方式.
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186

S. Moshkunov

Institute for Electrophysics and Electric Power

Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186

V. Khomich

Institute for Electrophysics and Electric Power

Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186

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