Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors
- Авторы: Malashin M.V.1, Moshkunov S.I.1, Khomich V.Y.1
-
Учреждения:
- Institute for Electrophysics and Electric Power
- Выпуск: Том 59, № 2 (2016)
- Страницы: 222-225
- Раздел: Electronics and Radio Engineering
- URL: https://bakhtiniada.ru/0020-4412/article/view/158941
- DOI: https://doi.org/10.1134/S0020441216020081
- ID: 158941
Цитировать
Аннотация
The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.
Ключевые слова
Об авторах
M. Malashin
Institute for Electrophysics and Electric Power
Автор, ответственный за переписку.
Email: m_malashin@mail.ru
Россия, Dvortsovaya nab. 18, St. Petersburg, 191186
S. Moshkunov
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
Россия, Dvortsovaya nab. 18, St. Petersburg, 191186
V. Khomich
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
Россия, Dvortsovaya nab. 18, St. Petersburg, 191186
Дополнительные файлы
