Some features of localization of Al, Ga and In impurities in ZnO layers
- 作者: Akhmedov A.K.1, Asvarov A.S.2, Murliev E.K.1, Shomakhov Z.V.3
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隶属关系:
- Institute of Physics of the Dagestan Federal Research Center of RAS
- Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center «Kurchatov Institute
- Kabardino-Balkarian State University named after H.M. Berbekov
- 期: 编号 16 (2024)
- 页面: 575-583
- 栏目: Physical and chemical foundations of nanotechnology
- URL: https://bakhtiniada.ru/2226-4442/article/view/319461
- DOI: https://doi.org/10.26456/pcascnn/2024.16.575
- EDN: https://elibrary.ru/GVYDUH
- ID: 319461
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作者简介
Akhmed Akhmedov
Institute of Physics of the Dagestan Federal Research Center of RASPh. D., Leading Researcher
Abil Asvarov
Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center «Kurchatov InstitutePh. D., Senior Researcher
Eldar Murliev
Institute of Physics of the Dagestan Federal Research Center of RASJunior Researcher
Zamir Shomakhov
Kabardino-Balkarian State University named after H.M. Berbekov
Email: shozamir@yandex.ru
Ph. D., Director of the Institute of artificial intelligence and digital technologies
参考
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