Arsenide-silicate glasses formed by oxidation of sih4 and ash3 to diffuse arsenic into si and sio2
- Авторлар: Mustafayev H.A.1, Mustafayev A.H.1, Zdravomyslov D.M.1
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Мекемелер:
- Kabardino-Balkarian State University named after H.M. Berbekova.
- Шығарылым: Том 15, № 1 (2025)
- Беттер: 16-20
- Бөлім: Physics
- URL: https://bakhtiniada.ru/2221-7789/article/view/358102
- ID: 358102
Дәйексөз келтіру
Толық мәтін
Аннотация
The paper studied arsenide-silicate glasses formed by oxidation of SiH4 and AsH3. It has been shown that the precipitation rate decreases sharply when the concentration of AsH3 in the mixture of reagents is more than 10 mol%. The diffusion of arsenic through barrier oxide and without barrier oxide was studied using oxygen O2 and argon Ar as a diffusion medium. It has been shown that the use of oxygen O2 instead of argon Ar as a diffusion medium changes the nature of defects, leads to an increase in the depths of transitions and the surface concentration of arsenic As in diffusion layers. A connection has been found between the concentration of As2O3 in glasses and the tendency to form defects in glass during heat treatment.
Авторлар туралы
Hasan Mustafayev
Kabardino-Balkarian State University named after H.M. Berbekova.
Хат алмасуға жауапты Автор.
Email: zoone@mail.ru
Department of Electronics and Digital Information Technologies, Institute of Electronics, Robotics and Artificial Intelligence Ресей
Arslan Mustafayev
Kabardino-Balkarian State University named after H.M. Berbekova.
Email: zoone@mail.ru
Doctor of Technical Sciences, Professor of the Department of Information Technology and Information Security. Ресей
Denis Zdravomyslov
Kabardino-Balkarian State University named after H.M. Berbekova.
Email: zoone@mail.ru
Graduate student of 2 years of study in the specialty: Electronic component base of micro- and electronics, quantum devices. Ресей
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