Hall Effect in Germanium Doped with Different Impurities

Abstract

The influence of different impurities on the kinetics of electronic processes in n-Ge single crystals is investigated. A substantial decrease in the charge carrier mobility in the region of predominantly impurity scattering (at 77 K) in n-Ge crystals, as well as in germanium crystals doped with the rareearth elements, is detected, and this effect is explained.