Heterostructures Based on Magnetic and Topological Insulators
- 作者: Bezryadina T.V.1, Eremeev S.V.1,2
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隶属关系:
- National Research Tomsk State University
- Institute of Strength Physics and Materials Science of the Siberian Branch of the Russian Academy of Sciences
- 期: 卷 61, 编号 11 (2019)
- 页面: 1964-1970
- 栏目: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/241172
- DOI: https://doi.org/10.1007/s11182-019-01625-y
- ID: 241172
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详细
Using ab initio calculations, an investigation of the electronic structure of the magnetic insulator/topological insulator heterostructures is performed. Bismuth selenide is used as a topological insulator and monolayers of vanadium-based van der Waals materials VSe2 and VBi2Se4 – as magnetic materials. The formation of the latter one is possible via diffusion of the deposited vanadium and selenium atoms into the surface block of the layered Bi2Se3. A comparison of the electronic structure of the two heterostructures is performed and peculiar features of interaction of the Dirac state of the topological insulator with the magnetic states of vanadium are revealed.
作者简介
T. Bezryadina
National Research Tomsk State University
编辑信件的主要联系方式.
Email: tatiana.bezryadina@gmail.com
俄罗斯联邦, Tomsk
S. Eremeev
National Research Tomsk State University; Institute of Strength Physics and Materials Science of the Siberian Branch of the Russian Academy of Sciences
Email: tatiana.bezryadina@gmail.com
俄罗斯联邦, Tomsk; Tomsk
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