Heterostructures Based on Magnetic and Topological Insulators
- Авторлар: Bezryadina T.V.1, Eremeev S.V.1,2
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Мекемелер:
- National Research Tomsk State University
- Institute of Strength Physics and Materials Science of the Siberian Branch of the Russian Academy of Sciences
- Шығарылым: Том 61, № 11 (2019)
- Беттер: 1964-1970
- Бөлім: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/241172
- DOI: https://doi.org/10.1007/s11182-019-01625-y
- ID: 241172
Дәйексөз келтіру
Аннотация
Using ab initio calculations, an investigation of the electronic structure of the magnetic insulator/topological insulator heterostructures is performed. Bismuth selenide is used as a topological insulator and monolayers of vanadium-based van der Waals materials VSe2 and VBi2Se4 – as magnetic materials. The formation of the latter one is possible via diffusion of the deposited vanadium and selenium atoms into the surface block of the layered Bi2Se3. A comparison of the electronic structure of the two heterostructures is performed and peculiar features of interaction of the Dirac state of the topological insulator with the magnetic states of vanadium are revealed.
Негізгі сөздер
Авторлар туралы
T. Bezryadina
National Research Tomsk State University
Хат алмасуға жауапты Автор.
Email: tatiana.bezryadina@gmail.com
Ресей, Tomsk
S. Eremeev
National Research Tomsk State University; Institute of Strength Physics and Materials Science of the Siberian Branch of the Russian Academy of Sciences
Email: tatiana.bezryadina@gmail.com
Ресей, Tomsk; Tomsk
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