Heterostructures Based on Magnetic and Topological Insulators


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Using ab initio calculations, an investigation of the electronic structure of the magnetic insulator/topological insulator heterostructures is performed. Bismuth selenide is used as a topological insulator and monolayers of vanadium-based van der Waals materials VSe2 and VBi2Se4 – as magnetic materials. The formation of the latter one is possible via diffusion of the deposited vanadium and selenium atoms into the surface block of the layered Bi2Se3. A comparison of the electronic structure of the two heterostructures is performed and peculiar features of interaction of the Dirac state of the topological insulator with the magnetic states of vanadium are revealed.

Негізгі сөздер

Авторлар туралы

T. Bezryadina

National Research Tomsk State University

Хат алмасуға жауапты Автор.
Email: tatiana.bezryadina@gmail.com
Ресей, Tomsk

S. Eremeev

National Research Tomsk State University; Institute of Strength Physics and Materials Science of the Siberian Branch of the Russian Academy of Sciences

Email: tatiana.bezryadina@gmail.com
Ресей, Tomsk; Tomsk

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Springer Science+Business Media, LLC, part of Springer Nature, 2019