Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures


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Infrared photodetectors with germanium quantum dots on silicon are considered. Some characteristics of such detectors are calculated, namely: dark current and detectivity in the modes of limitation by background and generation-recombination noises. A comparison is also made of the performance of quantum-dot infrared detectors with the performance of HgCdTe detectors.

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R. Douhan

National Research Tomsk State University

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Email: rahaf.douhan@gmail.com
俄罗斯联邦, Tomsk

A. Kokhanenko

National Research Tomsk State University

Email: rahaf.douhan@gmail.com
俄罗斯联邦, Tomsk

K. Lozovoy

National Research Tomsk State University

Email: rahaf.douhan@gmail.com
俄罗斯联邦, Tomsk

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