Stationary Shock Waves with Oscillating Front in Dislocation Systems of Semiconductors
- 作者: Gestrin S.G.1,2, Shchukina E.V.1
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隶属关系:
- Yuri Gagarin State Technical University of Saratov
- Saratov State Agrarian University named after N. I. Vavilov
- 期: 卷 61, 编号 1 (2018)
- 页面: 179-186
- 栏目: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/240102
- DOI: https://doi.org/10.1007/s11182-018-1382-x
- ID: 240102
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详细
The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg–de Vries–Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.
作者简介
S. Gestrin
Yuri Gagarin State Technical University of Saratov; Saratov State Agrarian University named after N. I. Vavilov
编辑信件的主要联系方式.
Email: gestrin.s@yandex.ru
俄罗斯联邦, Saratov; Saratov
E. Shchukina
Yuri Gagarin State Technical University of Saratov
Email: gestrin.s@yandex.ru
俄罗斯联邦, Saratov
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