Stationary Shock Waves with Oscillating Front in Dislocation Systems of Semiconductors
- Authors: Gestrin S.G.1,2, Shchukina E.V.1
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Affiliations:
- Yuri Gagarin State Technical University of Saratov
- Saratov State Agrarian University named after N. I. Vavilov
- Issue: Vol 61, No 1 (2018)
- Pages: 179-186
- Section: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/240102
- DOI: https://doi.org/10.1007/s11182-018-1382-x
- ID: 240102
Cite item
Abstract
The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg–de Vries–Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.
About the authors
S. G. Gestrin
Yuri Gagarin State Technical University of Saratov; Saratov State Agrarian University named after N. I. Vavilov
Author for correspondence.
Email: gestrin.s@yandex.ru
Russian Federation, Saratov; Saratov
E. V. Shchukina
Yuri Gagarin State Technical University of Saratov
Email: gestrin.s@yandex.ru
Russian Federation, Saratov
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