Peculiarities of Electrical Characteristics of Ferroelectric Memory Elements Based on PZT-Films

L. A. Delimova; E. V. Gushchina; V. S. Yuferev; V. V. Ratnikov; N. V. Zaitseva; N. V. Sharenkova; D. S. Seregin; K. A. Vorotilov; A. S. Sigov

doi:10.1007/s11182-016-0647-5

Peculiarities of Electrical Characteristics of Ferroelectric Memory Elements Based on PZT-Films

作者: Delimova L.A.¹, Gushchina E.V.¹, Yuferev V.S.¹, Ratnikov V.V.¹, Zaitseva N.V.¹, Sharenkova N.V.¹, Seregin D.S.², Vorotilov K.A.², Sigov A.S.²^,3
隶属关系:
1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
2. Moscow State Institute of Radio Engineering, Electronics, and Automation
3. National Research Tomsk Polytechnic University
期: 卷 58, 编号 9 (2016)
页面: 1301-1305
栏目: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/236759
DOI: https://doi.org/10.1007/s11182-016-0647-5
ID: 236759

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Self-polarization directed from the top electrode to the bottom one is found in the ferroelectric Pt/PZT/Pt capacitor using the method of depolarizing hysteresis loops. We attribute the self-polarization to the flexoelectric effect caused by the mismatch between the lattice parameters of the bottom Pt film and PZT-film. This result is consistent with the measurements of photocurrent in the short-circuited structure that also indicate the presence of the downward polarization in the PZT-film.