Peculiarities of Electrical Characteristics of Ferroelectric Memory Elements Based on PZT-Films


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Self-polarization directed from the top electrode to the bottom one is found in the ferroelectric Pt/PZT/Pt capacitor using the method of depolarizing hysteresis loops. We attribute the self-polarization to the flexoelectric effect caused by the mismatch between the lattice parameters of the bottom Pt film and PZT-film. This result is consistent with the measurements of photocurrent in the short-circuited structure that also indicate the presence of the downward polarization in the PZT-film.

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L. Delimova

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

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Email: ladel@mail.ioffe.ru
俄罗斯联邦, St. Petersburg

E. Gushchina

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: sigov@mirea.ru
俄罗斯联邦, St. Petersburg

V. Yuferev

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: sigov@mirea.ru
俄罗斯联邦, St. Petersburg

V. Ratnikov

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

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Email: Ratnikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg

N. Zaitseva

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: sigov@mirea.ru
俄罗斯联邦, St. Petersburg

N. Sharenkova

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: sigov@mirea.ru
俄罗斯联邦, St. Petersburg

D. Seregin

Moscow State Institute of Radio Engineering, Electronics, and Automation

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Email: d_seregin@mirea.ru
俄罗斯联邦, Moscow

K. Vorotilov

Moscow State Institute of Radio Engineering, Electronics, and Automation

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Email: vorotilov@mirea.ru
俄罗斯联邦, Moscow

A. Sigov

Moscow State Institute of Radio Engineering, Electronics, and Automation; National Research Tomsk Polytechnic University

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Email: sigov@mirea.ru
俄罗斯联邦, Moscow; Tomsk

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