The Influence of Materials of Electrodes of Sensitized Solar Cells on Their Capacitive and Electrical Characteristics
- Авторы: Lazarenko P.I.1, Kozyukhin S.A.2,3, Mokshina A.I.1, Sherchenkov A.A.1, Patrusheva T.N.4, Irgashev R.A.5, Lebedev E.A.1, Kozik V.V.2,6
-
Учреждения:
- National Research University of Electronic Technology (MIET)
- National Research Tomsk State University
- N. S. Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
- Siberian Federal University
- I. A. Postovskii Institute of Organic Synthesis of the Ural Branch of the Russian Academy of Sciences
- Yurga Institute of Technology of National Research Tomsk Polytechnic University
- Выпуск: Том 61, № 1 (2018)
- Страницы: 196-202
- Раздел: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/240124
- DOI: https://doi.org/10.1007/s11182-018-1385-7
- ID: 240124
Цитировать
Аннотация
An estimation is made of the internal capacitance of sensitized solar cells (SSCs) manufactured by the method of extraction pyrolysis. The structures under study are characterized by a hysteresis in the current-voltage characteristic obtained in the direct and reverse modes of voltage variation. The investigations of SSCs demonstrate a high inertness of the parameters under connection and disconnection of the light source. The use of a transparent conductive ITO-electrode, manufactured by the extraction pyrolysis, increases the external capacitance of the cell and decelerates the processes of current decay after the light source connection compared to the commercial FTO-electrode. The values of charges, capacitances, and SSC charge conservation efficiencies are calculated and the internal resistance of the SSCs under study is estimated. According to the estimations performed, the specimen with an ITO-layer possesses a capacitance equal to С1 = 1.23·10–3 F, which is by two orders of magnitude higher than that of the specimen with a FTO-layer (С2 = 2.06·10–5 F).
Об авторах
P. Lazarenko
National Research University of Electronic Technology (MIET)
Автор, ответственный за переписку.
Email: aka.jum@gmail.com
Россия, Moscow
S. Kozyukhin
National Research Tomsk State University; N. S. Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences
Email: aka.jum@gmail.com
Россия, Tomsk; Moscow
A. Mokshina
National Research University of Electronic Technology (MIET)
Email: aka.jum@gmail.com
Россия, Moscow
A. Sherchenkov
National Research University of Electronic Technology (MIET)
Email: aka.jum@gmail.com
Россия, Moscow
T. Patrusheva
Siberian Federal University
Email: aka.jum@gmail.com
Россия, Krasnoyarsk
R. Irgashev
I. A. Postovskii Institute of Organic Synthesis of the Ural Branch of the Russian Academy of Sciences
Email: aka.jum@gmail.com
Россия, Ekaterinburg
E. Lebedev
National Research University of Electronic Technology (MIET)
Email: aka.jum@gmail.com
Россия, Moscow
V. Kozik
National Research Tomsk State University; Yurga Institute of Technology of National Research Tomsk Polytechnic University
Email: aka.jum@gmail.com
Россия, Tomsk; Yurga
Дополнительные файлы
