Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3–Sb2Te3 Crystal
- Авторы: Stepanov N.P.1, Nalivkin V.Y.1
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Учреждения:
- Transbaikal State University
- Выпуск: Том 59, № 1 (2016)
- Страницы: 84-91
- Раздел: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/236958
- DOI: https://doi.org/10.1007/s11182-016-0741-8
- ID: 236958
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Аннотация
A technique is presented, by which the magnetic susceptibility χ|G of the ion core of an anisotropic semiconductor Bi2Te3–Sb2Te3 crystal is determined from experimental data on the magnetic susceptibility χ∥ and χ⊥ obtained with allowance for the orientation of the magnetic field vector H with respect to the trigonal C3 axis of the crystal in accordance with the expression χ∥/χ⊥ = (χ∥eh + χG)/(χ⊥eh + χG).In this expression, the value of the magnetic susceptibility of free charge carriers χ∥eh and χ⊥eh depending on their effective masses m∥* and m⊥* known from the experiment is calculated within the framework of the Pauli and Landau- Peierls approaches. The found value of χ|Gfor Bi2Te3–Sb2Te3 crystals is in good agreement with experimental data, as well as with the estimates obtained in the framework of the Larmor approach explaining, in particular, a linear dependence of the molar magnetic susceptibility on the number of electrons in the molecule observed for a large number of compounds. The proposed technique can be extended to other anisotropic semiconductors.
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Об авторах
N. Stepanov
Transbaikal State University
Автор, ответственный за переписку.
Email: NP-Stepanov@mail.ru
Россия, Chita
V. Nalivkin
Transbaikal State University
Email: NP-Stepanov@mail.ru
Россия, Chita
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