Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3–Sb2Te3 Crystal


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Аннотация

A technique is presented, by which the magnetic susceptibility χ|G of the ion core of an anisotropic semiconductor Bi2Te3–Sb2Te3 crystal is determined from experimental data on the magnetic susceptibility χ and χ obtained with allowance for the orientation of the magnetic field vector H with respect to the trigonal C3 axis of the crystal in accordance with the expression χ/χ = (χeh + χG)/(χeh + χG).In this expression, the value of the magnetic susceptibility of free charge carriers χeh and χeh depending on their effective masses m* and m* known from the experiment is calculated within the framework of the Pauli and Landau- Peierls approaches. The found value of χ|Gfor Bi2Te3–Sb2Te3 crystals is in good agreement with experimental data, as well as with the estimates obtained in the framework of the Larmor approach explaining, in particular, a linear dependence of the molar magnetic susceptibility on the number of electrons in the molecule observed for a large number of compounds. The proposed technique can be extended to other anisotropic semiconductors.

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Авторлар туралы

N. Stepanov

Transbaikal State University

Хат алмасуға жауапты Автор.
Email: NP-Stepanov@mail.ru
Ресей, Chita

V. Nalivkin

Transbaikal State University

Email: NP-Stepanov@mail.ru
Ресей, Chita

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