Peculiarities of Kinetic Coefficients of Single Crystals of a Layered р-GaSe Semiconductor


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The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.

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A. Abdinov

Baku State University

Autor responsável pela correspondência
Email: abdinov-axmed@yandex.ru
Azerbaijão, Baku

R. Babaeva

Azerbaijan State University of Economics

Email: abdinov-axmed@yandex.ru
Azerbaijão, Baku

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