Peculiarities of Kinetic Coefficients of Single Crystals of a Layered р-GaSe Semiconductor
- Autores: Abdinov A.S.1, Babaeva R.F.2
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Afiliações:
- Baku State University
- Azerbaijan State University of Economics
- Edição: Volume 61, Nº 9 (2019)
- Páginas: 1667-1673
- Seção: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/240977
- DOI: https://doi.org/10.1007/s11182-018-1585-1
- ID: 240977
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Resumo
The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.
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Sobre autores
A. Abdinov
Baku State University
Autor responsável pela correspondência
Email: abdinov-axmed@yandex.ru
Azerbaijão, Baku
R. Babaeva
Azerbaijan State University of Economics
Email: abdinov-axmed@yandex.ru
Azerbaijão, Baku
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