Electrical and Photoelectrical Characteristics of  с -Si/Porous–Si/CdS Heterojunctions

H. M. Mamedov; A. Kukevecz; Z. Konya; K. Kordas; S. I. Shah; V. U. Mamedov; Kh. M. Ahmedova; V. J. Mamedova; R. M. Rzaev; Sh. A. Shamilova; E. A. Khanmamedova; L. E. Agazade

doi:10.1007/s11182-018-1584-2

Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

Autores: Mamedov H.M.¹, Kukevecz A.², Konya Z.², Kordas K.³, Shah S.I.⁴, Mamedov V.U.¹, Ahmedova K.M.¹, Mamedova V.J.¹, Rzaev R.M.⁵, Shamilova S.A.¹, Khanmamedova E.A.¹, Agazade L.E.¹
Afiliações:
1. Baku State University
2. University of Szeged
3. University of Oulu
4. University of Delaware
5. Azerbaijan State University of Economics
Edição: Volume 61, Nº 9 (2019)
Páginas: 1660-1666
Seção: Physics of Semiconductors and Dielectrics
URL: https://bakhtiniada.ru/1064-8887/article/view/240975
DOI: https://doi.org/10.1007/s11182-018-1584-2
ID: 240975

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Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.