Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures

Аннотация

Infrared photodetectors with germanium quantum dots on silicon are considered. Some characteristics of such detectors are calculated, namely: dark current and detectivity in the modes of limitation by background and generation-recombination noises. A comparison is also made of the performance of quantum-dot infrared detectors with the performance of HgCdTe detectors.