Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy


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Аннотация

Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm–3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

Авторлар туралы

Z. Świątek

Institute of Metallurgy and Materials Science of Polish Academy of Sciences

Хат алмасуға жауапты Автор.
Email: z.swiatek@imim.pl
Польша, Krakow

P. Ozga

Institute of Metallurgy and Materials Science of Polish Academy of Sciences

Email: z.swiatek@imim.pl
Польша, Krakow

I. Izhnin

Scientific-Research Company “Carat”; National Research Tomsk State University

Email: z.swiatek@imim.pl
Украина, Lviv; Tomsk

E. Fitsych

Scientific-Research Company “Carat”

Email: z.swiatek@imim.pl
Украина, Lviv

A. Voitsekhovskii

National Research Tomsk State University

Email: z.swiatek@imim.pl
Ресей, Tomsk

A. Korotaev

National Research Tomsk State University

Email: z.swiatek@imim.pl
Ресей, Tomsk

K. Mynbaev

Ioffe Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Email: z.swiatek@imim.pl
Ресей, St. Petersburg; St. Petersburg

V. Varavin

A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: z.swiatek@imim.pl
Ресей, Novosibirsk

S. Dvoretsky

National Research Tomsk State University; A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: z.swiatek@imim.pl
Ресей, Tomsk; Novosibirsk

N. Mikhailov

A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: z.swiatek@imim.pl
Ресей, Novosibirsk

M. Yakushev

A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

Email: z.swiatek@imim.pl
Ресей, Novosibirsk

A. Bonchyk

Ya. S. Pidstrygach Institute for Applied Problems of Mechanics and Mathematics of the National Academy of Sciences of Ukraine

Email: z.swiatek@imim.pl
Украина, Lviv

H. Savytsky

Ya. S. Pidstrygach Institute for Applied Problems of Mechanics and Mathematics of the National Academy of Sciences of Ukraine

Email: z.swiatek@imim.pl
Украина, Lviv

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