Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy
- Авторлар: Świątek Z.1, Ozga P.1, Izhnin I.I.2,3, Fitsych E.I.2, Voitsekhovskii A.V.3, Korotaev A.G.3, Mynbaev K.D.4,5, Varavin V.S.6, Dvoretsky S.A.3,6, Mikhailov N.N.6, Yakushev M.V.6, Bonchyk A.Y.7, Savytsky H.V.7
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Мекемелер:
- Institute of Metallurgy and Materials Science of Polish Academy of Sciences
- Scientific-Research Company “Carat”
- National Research Tomsk State University
- Ioffe Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Ya. S. Pidstrygach Institute for Applied Problems of Mechanics and Mathematics of the National Academy of Sciences of Ukraine
- Шығарылым: Том 59, № 3 (2016)
- Беттер: 442-445
- Бөлім: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/237126
- DOI: https://doi.org/10.1007/s11182-016-0792-x
- ID: 237126
Дәйексөз келтіру
Аннотация
Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm–3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.
Негізгі сөздер
Авторлар туралы
Z. Świątek
Institute of Metallurgy and Materials Science of Polish Academy of Sciences
Хат алмасуға жауапты Автор.
Email: z.swiatek@imim.pl
Польша, Krakow
P. Ozga
Institute of Metallurgy and Materials Science of Polish Academy of Sciences
Email: z.swiatek@imim.pl
Польша, Krakow
I. Izhnin
Scientific-Research Company “Carat”; National Research Tomsk State University
Email: z.swiatek@imim.pl
Украина, Lviv; Tomsk
E. Fitsych
Scientific-Research Company “Carat”
Email: z.swiatek@imim.pl
Украина, Lviv
A. Voitsekhovskii
National Research Tomsk State University
Email: z.swiatek@imim.pl
Ресей, Tomsk
A. Korotaev
National Research Tomsk State University
Email: z.swiatek@imim.pl
Ресей, Tomsk
K. Mynbaev
Ioffe Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: z.swiatek@imim.pl
Ресей, St. Petersburg; St. Petersburg
V. Varavin
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: z.swiatek@imim.pl
Ресей, Novosibirsk
S. Dvoretsky
National Research Tomsk State University; A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: z.swiatek@imim.pl
Ресей, Tomsk; Novosibirsk
N. Mikhailov
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: z.swiatek@imim.pl
Ресей, Novosibirsk
M. Yakushev
A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: z.swiatek@imim.pl
Ресей, Novosibirsk
A. Bonchyk
Ya. S. Pidstrygach Institute for Applied Problems of Mechanics and Mathematics of the National Academy of Sciences of Ukraine
Email: z.swiatek@imim.pl
Украина, Lviv
H. Savytsky
Ya. S. Pidstrygach Institute for Applied Problems of Mechanics and Mathematics of the National Academy of Sciences of Ukraine
Email: z.swiatek@imim.pl
Украина, Lviv
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