To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers
- Authors: Rasulov V.R.1
-
Affiliations:
- Fergana State University
- Issue: Vol 59, No 10 (2017)
- Pages: 1699-1702
- Section: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/238987
- DOI: https://doi.org/10.1007/s11182-017-0963-4
- ID: 238987
Cite item
Abstract
Propagation of electron waves in a medium, whose properties vary only along a certain direction, is theoretically studied. The approach is based on the use of the single-electron stationary Schrödinger equation for the description of elastic scattering processes, including tunneling, of non-interacting spinless particles while maintaining their total energy.
About the authors
V. R. Rasulov
Fergana State University
Author for correspondence.
Email: r_rasulov51@mail.ru
Uzbekistan, Fergana
Supplementary files
