To the Theory of Electron Passage in a Semiconductor Structure Consisting of Alternating Asymmetric Rectangular Potential Wells and Barriers
- 作者: Rasulov V.R.1
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隶属关系:
- Fergana State University
- 期: 卷 59, 编号 10 (2017)
- 页面: 1699-1702
- 栏目: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/238987
- DOI: https://doi.org/10.1007/s11182-017-0963-4
- ID: 238987
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详细
Propagation of electron waves in a medium, whose properties vary only along a certain direction, is theoretically studied. The approach is based on the use of the single-electron stationary Schrödinger equation for the description of elastic scattering processes, including tunneling, of non-interacting spinless particles while maintaining their total energy.
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