Автор туралы ақпарат
Timofeev, V. A.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 60, № 2 (2017) | Physics of Semiconductors and Dielectrics | Growth of Epitaxial SiSn Films with High Sn Content for IR Converters | |
| Том 60, № 11 (2018) | Article | Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands | |
| Том 61, № 7 (2018) | Article | Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy |