作者的详细信息
Timofeev, V. A.
| 期 | 栏目 | 标题 | 文件 |
| 卷 60, 编号 2 (2017) | Physics of Semiconductors and Dielectrics | Growth of Epitaxial SiSn Films with High Sn Content for IR Converters | |
| 卷 60, 编号 11 (2018) | Article | Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands | |
| 卷 61, 编号 7 (2018) | Article | Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy |