Author Details
Dvoretsky, S. A.
| Issue | Section | Title | File |
| Vol 59, No 3 (2016) | Physics of Semiconductors and Dielectrics | Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy | |
| Vol 60, No 10 (2018) | Article | Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films | |
| Vol 60, No 11 (2018) | Article | Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator | |
| Vol 62, No 5 (2019) | Article | Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy | |
| Vol 62, No 6 (2019) | Physics of Semiconductors and Dielectrics | Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films |