Отправить статью по E-mail Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films
- Авторы: Izhnin I.I.1,2, Fitsych E.I.1, Voitsekhovskii A.V.2, Korotaev A.G.2, Mynbaev K.D.3,4, Varavin V.S.5, Dvoretsky S.A.2,5, Mikhailov N.N.5, Yakushev M.V.5, Bonchyk A.Y.6, Savytskyy H.V.6, Świątek Z.7
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Учреждения:
- Scientific Research Company “Carat”
- National Research Tomsk State University
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- University of Information Technologies, Mechanics, and Optics
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, National Academy of Sciences of Ukraine
- Institute of Metallurgy and Materials Science of the Polish Academy of Sciences
- Выпуск: Том 60, № 10 (2018)
- Страницы: 1752-1757
- Раздел: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/239487
- DOI: https://doi.org/10.1007/s11182-018-1278-9
- ID: 239487
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Аннотация
Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) CdxHg1–xTe (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n+–p- and n+–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p+–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.
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Об авторах
I. Izhnin
Scientific Research Company “Carat”; National Research Tomsk State University
Автор, ответственный за переписку.
Email: i.izhnin@carat.electron.ua
Украина, Lviv; Tomsk
E. Fitsych
Scientific Research Company “Carat”
Email: i.izhnin@carat.electron.ua
Украина, Lviv
A. Voitsekhovskii
National Research Tomsk State University
Email: i.izhnin@carat.electron.ua
Россия, Tomsk
A. Korotaev
National Research Tomsk State University
Email: i.izhnin@carat.electron.ua
Россия, Tomsk
K. Mynbaev
Ioffe Physical-Technical Institute of the Russian Academy of Sciences; University of Information Technologies, Mechanics, and Optics
Email: i.izhnin@carat.electron.ua
Россия, St. Petersburg; St. Petersburg
V. Varavin
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: i.izhnin@carat.electron.ua
Россия, Novosibirsk
S. Dvoretsky
National Research Tomsk State University; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: i.izhnin@carat.electron.ua
Россия, Tomsk; Novosibirsk
N. Mikhailov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: i.izhnin@carat.electron.ua
Россия, Novosibirsk
M. Yakushev
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: i.izhnin@carat.electron.ua
Россия, Novosibirsk
A. Bonchyk
Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, National Academy of Sciences of Ukraine
Email: i.izhnin@carat.electron.ua
Украина, Lviv
H. Savytskyy
Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, National Academy of Sciences of Ukraine
Email: i.izhnin@carat.electron.ua
Украина, Lviv
Z. Świątek
Institute of Metallurgy and Materials Science of the Polish Academy of Sciences
Email: i.izhnin@carat.electron.ua
Польша, Krakow
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