Author Details
Nikiforov, A. I.
| Issue | Section | Title | File |
| Vol 60, No 2 (2017) | Physics of Semiconductors and Dielectrics | Growth of Epitaxial SiSn Films with High Sn Content for IR Converters | |
| Vol 60, No 11 (2018) | Article | Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands | |
| Vol 61, No 7 (2018) | Article | Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy |