Capture and Emission of Charge Carriers by Quantum Well
- Authors: Davydov V.N.1, Karankevich O.A.1
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Affiliations:
- Tomsk State University of Control Systems and Radioelectronics
- Issue: Vol 61, No 2 (2018)
- Pages: 223-231
- Section: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/240139
- DOI: https://doi.org/10.1007/s11182-018-1389-3
- ID: 240139
Cite item
Abstract
The interaction of electrons from the conduction band of the barrier layer of a LED heterostructure with the quantum well size-quantization level described by the capture time and emission time of charge carriers is considered. Relaxation of an excess energy upon capture and emission of charge carriers occurs as a result of their collisions with phonons of the quantum well substance and the “barrier layer-quantum well” interface. Analytical expressions are obtained for the interaction times, taking into account the depth of the sizequantization level, involved in the interaction with electrons, and the width of the well. Numerical estimates show that in real conditions, the capture time is shorter than the emission time, and this difference increases with increasing depth of the level. At shallow depths, the capture and emission times are comparable.
About the authors
V. N. Davydov
Tomsk State University of Control Systems and Radioelectronics
Author for correspondence.
Email: dvn@fet.tusur.ru
Russian Federation, Tomsk
O. A. Karankevich
Email: dvn@fet.tusur.ru
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